Asymmetries influence on critical curves of the synthetic antiferromagnetic structures in magnetic random access memory

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• 作者：Iulian  ; Petrila  ; ;   ; ^{IulianPetrila@gmail.com} ; Alexandru  ; Stancu
• 关键词：Synthetic antiferromagnet ; Toggle mode ; MRAM ; Magnetic anisotropy
• 刊名：Computational Materials Science
• 出版年：2012
• 出版时间：January 2012
• 年：2012
• 卷：51
• 期：1
• 页码：122-126
• 全文大小：739 K

文摘

The influence of various physical parameters on magnetizations processes of two interacting ferromagnetic particles with significance for synthetic antiferromagnetic structures as a component of the magnetic random access memory are presented. Because the real structures are not perfectly symmetric, the alterations of the perfect structure reflected in magnetization processes especially on critical curves are analyzed. The effects of the coupling constant, magnetostatic interactions and anisotropy are also analyzed.