Numerical analysis of InxGa1∿/sub>xN/SnS and AlxGa1∿/sub>xN/SnS heterojunction solar cells
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- 作者：Shuo Lina ; linshuo_pv@163.com" class="auth_mail" title="E-mail the corresponding author ; Xirong Lia ; Huaqing Panb ; Huanting Chena ; Xiuyan Lia ; Yan Lia ; Jinrong Zhoua
- 关键词：Simulation ; SnS ; Thin film solar cell ; Heterojunction ; InGaN ; AlGaN ; Photovoltaics
- 刊名：Energy Conversion and Management
- 出版年：2016
- 出版时间：1 July 2016
- 年：2016
- 卷：119
- 期：Complete
- 页码：361-367
- 全文大小：1231 K
文摘
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InxGa1−xN/SnS and AlxGa1−xN/SnS solar cells are studied by numerical analysis.
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Performances of InxGa1−xN/SnS solar cells enhanced with decreasing In content.
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The electron barrier leads to the degraded efficiency of AlxGa1−xN/SnS solar cells.
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GaN/SnS solar cell exhibits the highest efficiency 26.34%.