Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
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- 作者：Raffaella Lo Nigroa ; raffaella.lonigro@imm.cnr.it" class="auth_mail" title="E-mail the corresponding author ; Emanuela Schilirò ; a ; b ; Giuseppe Grecoa ; Patrick Fiorenzaa ; Fabrizio Roccafortea
- 关键词：Alumina ; Dielectrics ; Plasma Enhanced Atomic Layer Deposition
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：30 October 2016
- 年：2016
- 卷：617
- 期：part_PB
- 页码：138-142
- 全文大小：816 K
文摘
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Al2O3 films were grown by Plasma Enhanced-ALD on AlGaN/GaN substrates.
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Properties of Al2O3 were compared after surface pre-deposition treatments.
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HF solution treatment improves dielectric properties.