Nanoindentation of Mg-doped AlGaN thin films
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文摘
The effects of Mg-containing precursor flow rate on the nanomechanical characteristics of the Mg-doped AlGaN thin films are investigated by using nanoindentation technique. The Mg-doped AlGaN thin films were deposited on sapphire substrates by metal-organic chemical-vapor deposition (MOCVD) with the various flow rates of 100, 200 and 600 sccm of bis-(cyclopentadienyl)-magnesium (Cp2Mg) precursor. Nanoindentation results revealed apparent discontinuities (so-called multiple 鈥減op-ins鈥? in the load-displacement curves, while no discontinuity was observed in the unloading segment of the load-displacement curves. The hardness and Young鈥檚 modulus of Mg-doped AlGaN thin films measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) method indicated that both mechanical properties increased with increasing the Mg concentration with the hardness and the Young鈥檚 modulus being increased from 20.62 卤 0.53 to 24.17 卤 0.72 GPa and from 317.48 卤 7.82 to 364.63 卤 17.62 GPa, respectively, as the Mg concentration raised from 100 to 600 sccm.

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