Metal Organic Chemical Vapor Deposition of nickel oxide thin films for wide band gap device technology
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- 作者：Raffaella Lo Nigroa ; raffaella.lonigro@imm.cnr.it" class="auth_mail ; Sergio Battiatob ; Giuseppe Grecoa ; Patrick Fiorenzaa ; Fabrizio Roccafortea ; Graziella Malandrinob
- 关键词：Nickel oxide ; Thin films ; MOCVD ; Dielectrics ; GaN devices ; Power microelectronics
- 刊名：Thin Solid Films
- 出版年：31 July 2014
- 年：2014
- 卷：563
- 期：Complete
- 页码：50-55
- 全文大小：921 K
文摘
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NiO thin films are potential candidates for power microelectronics applications.
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NiO epitaxial thin films have been grown on AlGaN/GaN substrates by MOCVD.
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Comprehensive insights of the MOCVD process have been performed.
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NiO thin films showed to be a good dielectric for MOSFET in GaN.
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NiO thin films demonstrated to possess good dielectric constant (11.7).