An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation

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• 作者：Saqib Ali Khan^a ; ^{Saqibkhan@hanyang.ac.kr} ; Chulseung Lim^a ; Geunyong Bak^a ; Sanghyeon Baeg^a ; Soonyoung Lee^b
• 关键词：Single event effect (SEE) ; Alpha particle ; Soft errors ; GEANT4 ; 14  ; nm FinFET
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：100-108
• 全文大小：1369 K
• 卷排序：69

文摘

New approach to measure alpha particle induced Single Event Upset Cross-section for flip-chip packaged Devices High energy alpha particles irradiation is performed from backside to die to deposit charge in the active circuit of device High energy alpha particle irradiation from backside of die mimics low energy alpha emitted from radioactive impurities The cross-section measured using new approach is consistent with that of measured using conventional method This method allows flip-chip bonded devices to be tested without having to etch away part of package and chip from backside