AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices
AlN films with 50 to 1500 nm thickness were produced over vertically aligned CNTs. AlN/CNT shell/core assembly exhibits enhancement in PL properties. The 5.85 eV exciton band intensity maximizes for 600 nm think AlN film over CNTs. The AlN/CNT shell/core nanoassembly can be used for deep UV optoelectronic devices.