Electrical and thermal response of silicon oxycarbide materials obtained by spark plasma sintering

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• 作者：M. Alejandra Mazo^a ; ^{sandra@icv.csic.es} ; Aitana Tamayo^a ; Amador C. Caballero^b ; Juan Rubio^a
• 关键词：Silicon oxycarbide material ; Spark plasma sintering ; HRTEM ; Electrical conductivity ; Thermal conductivity
• 刊名：Journal of the European Ceramic Society
• 出版年：2017
• 出版时间：May 2017
• 年：2017
• 卷：37
• 期：5
• 页码：2011-2020
• 全文大小：4359 K
• 卷排序：37

文摘

In order to obtain dense silicon oxycarbide (SiOC) materials that maintain the properties of glass, non-conventional spark plasma sintering was used to sinter SiOC powders from 1300 to 1700 °C and with 40 MPa of pressure. The concurrence of electrical current, high pressure and low vacuum while the material is being heating produces a dense SiOC-derived material composed of a SiO2 glassy matrix reinforced with SiC nanowires grown in situ, graphene-like carbon and turbostratic graphite. SiOC materials with high electrical and thermal response are obtained as a result of this new processing technique. Electrical resistivity undergoes an extraordinary decrease of five orders of magnitude from 1300 (1.0 × 105 Ω m) to 1700 °C (0.78 Ω m), ranging from insulate to semiconductor material; and thermal conductivity increases by 30%, for these sintering temperatures.