Effect of different EBL structures on deep violet InGaN laser diodes performance
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- 作者：Gh. Alahyarizadeha ; g_alahyarizadeh@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; M. Amirhoseinya ; b ; Z. Hassanc
- 关键词：InGaN DQW laser diode ; Quantum well ; Electron blocking layer ; Quaternary ; Numerical simulation
- 刊名：Optics & Laser Technology
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：76
- 期：Complete
- 页码：106-112
- 全文大小：3008 K
文摘
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In0.082Ga0.918N/GaN DQW laser diodes with different EBL structure were studied.
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Quaternary AlInGaN EBL structure enhanced radiative recombination.
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Enhancing radiative recombination increased the optical output power.
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LDs with the quaternary EBL present higher output power, slope efficiency.鈥?/p>