Formation of all-oxide solar cells in atmospheric condition based on Cu2O thin-films grown through SILAR technique
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文摘

SILAR films of Cu2O incorporated in pn-junction solar cells.

Layers of NiO and ZnO were used along with p-type Cu2O and n-type SnO2 thin-films.

The cells were fabricated under atmospheric conditions.

From STS, band-edges of semiconductors located with respect to their Fermi energy.

The all oxide heterojunction with staircase-like bands facilitated carrier transport.

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