SILAR films of Cu2O incorporated in pn-junction solar cells.
Layers of NiO and ZnO were used along with p-type Cu2O and n-type SnO2 thin-films.
The cells were fabricated under atmospheric conditions.
From STS, band-edges of semiconductors located with respect to their Fermi energy.
The all oxide heterojunction with staircase-like bands facilitated carrier transport.