Study of vanadium doping effects on structural, opto-thermal and optical properties of sprayed ZnO semiconductor layers
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文摘
In this work, the sprayed pyrolysis technique was carried out to prepare vanadium doped ZnO thin films with different controlled percentage (1?5 % ). Particularly, it has been demonstrated, through original conjoint morphological?structural and optical investigations that some interesting physical properties were implemented. Indeed, X-ray diffraction (XRD) analysis shows that the films with doping concentration less than 5 at. % have a w¨¹rtzite structure and grow mainly along the c-axis orientation. The surface morphology of the ZnO:V thin films was examined by AFM. On the other hand, the optical constants (refractive index, extinction coefficient and the dielectric constants (?1 (¦Ë) ?2 (¦Ë))) have been obtained by transmittance?reflectance data. The optical band gap energy was between 3.1 and 3.2 eV as doping concentration increased from 1 to 5 at. % mol. All the results have been discussed in terms of vanadium doping concentration.

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