Evolution of impurity incorporation during ammonothermal growth of GaN

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• 作者：Sakari Sintonen^a ; ^{sakari.sintonen@ikz-berlin.de} ; Stefanie Wahl^b ; Susanne Richter^b ; Sylke Meyer^b ; Sami Suihkonen^c ; Tobias Schulz^a ; Klaus Irmscher^a ; Andreas N. Danilewsky^d ; Turkka O. Tuomi^c ; Romuald Stankiewicz^e ; Martin Albrecht^a
• 关键词：00-01 ; 99-00
• 刊名：Journal of Crystal Growth
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：456
• 期：Complete
• 页码：51-57
• 全文大小：1007 K
• 卷排序：456

文摘

Ammonothermal GaN was grown in several steps in several autoclaves. Impurity incorporation varied by over an order of magnitude between autoclaves. No dislocation generation despite strain due to inhomogeneous impurity incorporation. High oxygen concentration resulted in a high free carrier concentration. High manganese concentration reduced photoluminescence intensity dramatically.