Reduction of crack density in ammonothermal bulk GaN growth

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• 作者：Edward Letts ; ^{ed@spmaterials.com} ; Daryl Key ; Tadao Hashimoto
• 关键词：A2. Growth from solutions ; A2. Single crystal growth ; B1. Nitrides ; B1. Semiconducting gallium compounds
• 刊名：Journal of Crystal Growth
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：456
• 期：Complete
• 页码：27-32
• 全文大小：1888 K
• 卷排序：456

文摘

A detailed XRD mapping of different manufacturers’ HVPE Seeds was performed. Ammonothermal growth on different HVPE seeds showed very different crack densities. SixPoint developed a method to evaluate seed suitability for ammonothermal growth. SixPoint Materials is now able to grow thick, large area, crack free GaN crystals. SixPoint Materials is making 10×10 mm GaN wafers for device testing with partners.