Fabrication and performance characteristics of a CsI(Tl)/PIN diode radiation sensor for industrial applications

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• 作者：Han Soo Kim ; Jang Ho Ha ; Se Hwan Park ; Seung Yeon Cho ; Yong Kyun Kim
• 关键词：CsI(Tl) ; PIN diode ; Photon counting ; Gamma rays ; NDT
• 刊名：Applied Radiation and Isotopes
• 出版年：2009
• 出版时间：July-August 2009
• 年：2009
• 卷：67
• 期：7-8
• 页码：1463-1465
• 全文大小：333 K

文摘

CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11×11×21 mm³ were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9 % for 660 keV gamma rays and 4.9 % for 1330 keV. The fluctuation of the directional dependency was below 14 % from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.