GaSe:Er³⁺ crystals for SHG in the infrared spectral range

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• 作者：Z.-S. Feng ; J. Guo ; J.-J. Xie ; L.-M. Zhang ; J.-Y. Gao ; Yu.M. Andreev ; T.I. Izaak ; K.A. Kokh ; G.V. Lanskii ; A.V. Shaiduko ; A.V. Shabalina ; V.A. Svetlichnyi
• 关键词：GaSe ; Er doping ; Crystal growth ; Characterization
• 刊名：Optics Communications
• 出版年：1 May, 2014
• 年：2014
• 卷：318
• 期：Complete
• 页码：205-211
• 全文大小：3114 K

文摘

Centimeter-sized Er-doped single crystals were grown from the melts GaSe:Er(0.025, 0.1, 0.5, 1 and 2 at%) by modified vertical Bridgman technology. Real Er content is ascertained as 0.009, 0.019, 0.033, 0.042 and 0.048 at%, respectively. Solubility of Er in GaSe does not exceed 5脳10^鈭?. Optimal doping of 0.033 at% of Er was established from SHG experiment. Improved optical quality is identified as a reason of increased nonlinearity for about 24% to that in pure GaSe. New Raman scattering band is found at 2900 cm^鈭? that properly related to ⁴F_9/2鈫?sup>4I_9/2 transition of Er³⁺ ion.