Charge transport and vacancy energy spectrum in HCP ⁴He

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• 作者：Olga A. Andreeva ; Konstantin O. Keshishev ; Andrei D. Savischev
• 刊名：Physica B
• 出版年：2000
• 出版时间：July 2000
• 年：2000
• 卷：284-288
• 期：Part 1
• 页码：343-344
• 全文大小：73 K

文摘

Experimental results on the anisotropy of positive ion motion in HCP ⁴He are explained using a quantum approach to charge transport including a symmetry aspect. Ion drift along the C₆-axis of the crystal is shown to occur via interaction with one vacancy, in perpendicular directions with two vacancies.