Carbon nanotube nanoradios: The field emission and transistor configurations

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• 作者：Pascal Vincent ; ^{pascal.vincent@univ-lyon1.fr} ; Anthony Ayari ; Philippe Poncharal ; Thomas Barois ; Sorin Perisanu ; V. Gouttenoire ; Stephen T. Purcell
• 关键词：Carbon nanotube ; Field effect transistor ; Nanoradio ; Field emission
• 刊名：Comptes Rendus Physique
• 出版年：2012
• 出版时间：June, 2012
• 年：2012
• 卷：13
• 期：5
• 页码：395-409
• 全文大小：830 K

文摘

In this article, we explore and compare two distinct configurations of the ¡°nanoradio?concept where individual carbon nanotube resonators are the central electromechanical element permitting signal demodulation. The two configurations of singly-clamped field emitters and doubly-clamped field effect transistors are examined which at first glance are quite different, but in fact involve quite similar physical concepts. Amplitude, frequency and digital demodulation are demonstrated and the analytical formulae describing the demodulation are derived as functions of the system parameters. The crucial role played by the mechanical resonance in demodulation is clearly demonstrated. For the field emission configuration we particularly concentrate on how the demodulation depends on the variation of the field amplification factor during resonance and show that amplitude demodulation results in the best transmitted signal. For the transistor configuration the important aspect is the variation of the nanotube conductance as a function of its distance to the gate. In this case frequency demodulation is much more effective and digital signal processing was achieved. The respective strengths and weaknesses of each configuration are discussed throughout the article.