Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)
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- 作者：C.S.C. Barretta ; cscbarrett@ufl.edu" class="auth_mail" title="E-mail the corresponding author ; T.P. Martina ; X.-Y. Baob ; E.L. Kennona ; L. Gutierreza ; P. Martinb ; E. Sanchezb ; K.S. Jonesa
- 关键词：A1. Planar defects ; A3. Metalorganic chemical vapor deposition ; B2. Semiconducting gallium arsenide ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 September 2016
- 年：2016
- 卷：450
- 期：Complete
- 页码：39-44
- 全文大小：763 K
文摘
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GaAs films grown on Si(001) by MOCVD with varied bulk growth temperature.
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Examined annihilation rate of antiphase boundaries (APBs) with respect to film thickness.
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Higher bulk growth temperatures enhance the annihilation rate of APBs.
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APB annihilation rate increases from 2.6 to 10.7 μm−1 over an 80 °C range.
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An activation energy of 1.1 eV is determined, corresponding to kinking of APBs.