Resistance dependence of transport properties in metal–multiwall carbon nanotube–metal structures

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• 作者：Kanda ; Akinobu ; Tsukagoshi ; Kazuhito ; Uryu ; Seiji ; Ootuka ; Youiti ; Aoyagi ; Yoshinobu
• 关键词：Multiwall carbon nanotube ; Coulomb blockade ; Coulomb oscillation
• 刊名：Microelectronic Engineering
• 出版年：2002
• 出版时间：August, 2002
• 年：2002
• 卷：63
• 期：1-3
• 页码：33-37
• 全文大小：438 K

文摘

We have studied current–voltage (I–V) characteristics of metal-on-tube metal–multiwall carbon nanotube–metal structures as a function of gate voltage. Device resistances ranged from about 10 kΩ to several MΩ, depending on the electrode metal and its deposition condition. When the resistance was much higher than the quantum resistance (R_Q