Sb₂(S_xSe_1−x)₃ sensitized solar cells prepared by solution deposition methods

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• 作者：Araceli Hern&aacute ; ndez-Granados^a ; ^b ; José ; Escorcia-Garcí ; a^c ; ^{jose.escorcia@cinvestav.mx" class="auth_mail" title="E-mail the corresponding author} ; Diego Peré ; z-Martí ; nez^d ; José ; Garcí ; a-Cerrillo^a ; Carmina Menchaca-Campos^b ; Hailin Hu^a
• 关键词：Semiconductor sensitized solar cells ; Sb2(SxSe1&minus ; x)3 absorber ; CdS nanoparticle ; Mesoporous TiO2 ; SILAR ; Chemical bath deposition
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：56
• 期：Complete
• 页码：222-227
• 全文大小：1887 K

文摘

Solid state semiconductor sensitized solar cells are a very active research subject in emerging photovoltaic technologies. In this work, heterojunctions of antimony sulfide-selenide (Sb₂(S_xSe_1−x)₃) solid solution as the absorbing material and cadmium sulfide coated titanium dioxide (TiO₂/CdS) as the electron conductor have been developed with solution deposition methods such as spin-coating, successive ionic layer adsorption and reaction (SILAR), and chemical bath deposition. In particular, CdS has been deposited on mesoporous TiO₂ layers by SILAR deposition, followed by the chemical deposition of Sb₂(S_xSe_1−x)₃. It was found that by increasing the number of CdS SILAR deposition, both the open circuit voltage V_oc and the short circuit current density J_sc of the Sb₂(S_xSe_1−x)₃ sensitized solar cells had been increased from 153 to 434 mV and 0.77–9.73 mA/cm², respectively. This improvement was attributed to the fact that the presence of the CdS on TiO₂ surface reduces the formation of undesired Sb₂O₃ and promotes a better nucleation of the Sb₂(S_xSe_1−x)₃ during the chemical bath deposition. The best result was obtained for the solar cell with 30 cycles of CdS which produced a V_oc of 434 mV, a J_sc of 9.73 mA/cm², and a power conversion efficiency of 1.69% under AM1.5 G solar radiation.