First-principles studies on substitutional doping by group IV and VI atoms in the two-dimensional arsenene
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- 作者：Juan Dua ; Congxin Xiaa ; xiacongxin@htu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Tianxing Wanga ; Xu Zhaoa ; Xiaoming Tanb ; Shuyi Weia
- 关键词：Arsenene ; Electronic structures ; First-principle methods
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：378
- 期：Complete
- 页码：350-356
- 全文大小：3061 K
文摘
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id="par0005">Effects of group IV and VI dopants are obvious on electronic structures in the arsenene nanosheets.
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id="par0010">C, Si, Ge and O substituting As induce deeper impurity states and with total magnetic moment 1 μB.
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id="par0015">Te substituting As atom is the most possible n-type doping due to the shallow transition level.