Framework to model neutral particle flux in convex high aspect ratio structures using one-dimensional radiosity

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• 作者：Paul Manstetten^a ; ^{manstetten@iue.tuwien.ac.at} ; Lado Filipovic^b ; Andreas Hö ; ssinger^c ; Josef Weinbub^a ; ^b ; Siegfried Selberherr^b
• 关键词：High aspect ratio ; Neutral particle flux ; Etching ; Radiosity ; View factor
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：141-147
• 全文大小：1258 K
• 卷排序：128

文摘

We present a computationally efficient framework to compute the neutral flux in high aspect ratio structures during three-dimensional plasma etching simulations. The framework is based on a one-dimensional radiosity approach and is applicable to simulations of convex rotationally symmetric holes and convex symmetric trenches with a constant cross-section. The framework is intended to replace the full three-dimensional simulation step required to calculate the neutral flux during plasma etching simulations. Especially for high aspect ratio structures, the computational effort, required to perform the full three-dimensional simulation of the neutral flux at the desired spatial resolution, conflicts with practical simulation time constraints. Our results are in agreement with those obtained by three-dimensional Monte Carlo based ray tracing simulations for various aspect ratios and convex geometries. With this framework we present a comprehensive analysis of the influence of the geometrical properties of high aspect ratio structures as well as of the particle sticking probability on the neutral particle flux.