GaN nanowire arrays by a patterned metal-assisted chemical etching
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- 作者：K.C. Wanga ; G.D. Yuana ; gdyuan@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author ; R.W. Wua ; H.X. Lua ; Z.Q. Liua ; T.B. Weia ; J.X. Wanga ; J.M. Lia ; W.J. Zhangb
- 关键词：A1. Etching ; Nanostructures ; A3. Chemical vapor deposition processes ; B1. Gallium compounds ; Nitrides ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 April 2016
- 年：2016
- 卷：440
- 期：Complete
- 页码：96-101
- 全文大小：1753 K
文摘
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A metal mask-assisted chemical etching method that produce self-organized GaN nanowire arrays.
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Porous nanostructures morphology depends on etching rate.
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The etching mechanism was illustrated by two separated electrochemical reactions.