Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching
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- 作者：Yunwon Song ; Jungwoo Oh ; jungwoo.oh@yonsei.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Subwavelength ; Surface texturing ; Antireflective characteristics ; Metal-assisted chemical etching ; Agglomeration ; GaAs
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：144
- 期：Complete
- 页码：159-164
- 全文大小：2023 K
文摘
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We fabricated antireflective GaAs subwavelength structures (SWSs).
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Metal-assisted chemical etching resulted in nano-scale subwavelength structures.
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GaAs SWSs reduced the total reflectance to 4.5% in a wavelength of 200–850 nm.
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This technique is a viable alternative to conventional reactive ion etching.