Combination of Advanced Optical Modelling with Electrical Simulation for Performance Evaluation of Practical 4-terminal Perovskite/c-Si Tandem Modules

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• 作者：Dong Zhang^a ; ^{d.zhang@ecn.nl" class="auth_mail" title="E-mail the corresponding author} ; Wiljan Verhees^a ; Maarten Dö ; renk&auml ; mper^a ; Weiming Qiu^b ; Klaas Bakker^a ; Astrid Gutjahr^a ; Sjoerd Veenstra^a ; Robert Gehlhaar^b ; Ulrich W. Paetzold^b ; Wim Soppe^a ; Ingrid Romijn^a ; L.J. Geerligs^a ; Tom Aernouts^b ; Arthur Weeber^a ; ^c
• 关键词：4-terminal ; hybrid tandem ; perovskite solar cell ; simulation ; transparent conductive oxide
• 刊名：Energy Procedia
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：92
• 期：Complete
• 页码：669-677
• 全文大小：577 K

文摘

The perovskite solar cell is considered a promising candidate as the top cell for high-efficiency tandem devices with crystalline silicon (c-Si) bottom cells, contributing to the cost reduction of photovoltaic energy. In this contribution, a simulation method, involving optical and electrical modelling, is established to calculate the performance of 4-terminal (4T) perovskite/c-Si tandem devices on a mini-module level. Optical and electrical characterization of perovskite and c-Si solar cells are carried out to verify the simulation parameters. With our method, the influence of transparent conductive oxide (TCO) layer thickness of perovskite top cells on the performance of tandem mini-modules is investigated in case of both tin-doped indium oxide (ITO) and hydrogen-doped indium oxide (IO:H). The investigation shows that optimization of TCO layer thickness and replacement of conventional ITO with highly transparent IO:H can lead to an absolute efficiency increase of about 1%. Finally, a practical assessment of the efficiency potential for the 4T perovskite/c-Si tandem mini-module is carried out, indicating that with a relatively simple 4T tandem module structure the efficiency of a single-junction c-Si mini-module (19.3%) can be improved by absolute 4.5%.