Enhanced performance of quantum dots light-emitting diodes: The case of Al₂O₃ electron blocking layer

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• 作者：Zhiwei Li ^{lizhiwei7982@yahoo.com}
• 关键词：Atomic layer deposition (ALD) ; Electron blocking layer (EBL) ; Aluminum oxide (Al2O3) thin film ; Quantum dots light-emitting diodes (QLEDs)
• 刊名：Vacuum
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：137
• 期：Complete
• 页码：38-41
• 全文大小：1358 K
• 卷排序：137

文摘

Al2O3 thin film applied as the electron blocking layer (EBL). Al2O3 film is fabricated by ALD method. The performance can be improved after introducing Al2O3 layer.