Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)
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- 作者：Osamu Kusumoto ; kusumoto.osamu@jp.panasonic.com" class="auth_mail" title="E-mail the corresponding author ; Atsushi Ohoka ; Nobuyuki Horikawa ; Kohtaro Tanaka ; Masahiko Niwayama ; Masao Uchida ; Yoshihiko Kanzawa ; Kazuyuki Sawada ; Tetsuzo Ueda
- 关键词：Silicon carbide (SiC) ; Diode-integrated MOS (DioMOS) ; Threshold voltage ; Gate oxide ; Channel diode ; HTGB ; HTRB
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：58
- 期：Complete
- 页码：158-163
- 全文大小：1199 K
文摘
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The issues on reliability of SiC MOSFETs are shift of Vth after application of high gate bias and body diode degradation.
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Diode-integrated MOSFET (DioMOS) can eliminates an external SiC SBD enabling the reduction of total cost.
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DioMOS does not flow reverse current onto the body diode so that it is free from the pn-junction degradation.
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Shift of Vth in DioMOS is less than 0.1V is confirmed by HTGB tests after 2000 hours gate stress Vgs =+25V/-10V at 150 °C.
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HTRB test shows very stable off-state and gate leakage current up to 2000 hours under the drain voltage of 1200V at 150 °C.