Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations

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• 作者：P. Laukkanen^a ; ^{pekka.laukkanen@utu.fi} ; M.P.J. Punkkinen^a ; ^{marko.punkkinen@utu.fi} ; A. Lahti^a ; J. Puustinen^b ; M. Tuominen^a ; J. Hilska^b ; J. M&auml ; kel&auml ; ^a ; J. Dahl^a ; M. Yasir^a ; M. Kuzmin^a ; ^c ; J.R. Osiecki^d ; K. Schulte^d ; M. Guina^b ; K. Kokko^a
• 关键词：GaAsBi ; Photoelectron spectroscopy ; Synchrotron radiation ; Photoluminescence
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：688-694
• 全文大小：1438 K
• 卷排序：396

文摘

XPS is used to study bulk-like properties of GaAsBi crystals. Surface effects are removed from XPS signal by an epitaxial AlAs cap film. Local variation of Bi composition is found. The result is consistent with photoluminescence and theoretical results. Ga vacancies and Bi crystallites are suggested to be dominating defects.