Carrier localization in In0.21Ga0.79As/GaAs multiple quantum wells: A modified Pässler model for the S-shaped temperature dependence of photoluminescence energy
The localization phenomena in QWs are explained by PL-temperature dependent. S-shaped form in PL peak energy is more pronounced in polar QWs due to PZ field. Modified Pässler model is used to replicate well the S-shaped behavior.