Future directions for higher-efficiency HIT solar cells using a Thin Silicon Wafer

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• 作者：Satoshi Tohoda ; Daisuke Fujishima ; Ayumu Yano ; Akiyoshi Ogane ; Kenta Matsuyama ; Yuya Nakamura ; Nozomu Tokuoka ; Hiroshi Kanno ; Toshihiro Kinoshita ; Hitoshi Sakata ; Mikio Taguchi ; Eiji Maruyama
• 关键词：Heterojunction ; a-Si ; c-Si ; Solar cell
• 刊名：Journal of Non-Crystalline Solids
• 出版年：2012
• 出版时间：1 September, 2012
• 年：2012
• 卷：358
• 期：17
• 页码：2219-2222
• 全文大小：635 K

文摘

To reduce the power generation cost of heterojunction with intrinsic thin layer (HIT) solar cells, it is necessary to use a thinner crystalline silicon wafer, as well as to improve the conversion efficiency. We have experimentally confirmed that V_OC of the HIT solar cell increases with decreasing the wafer thickness, and can reach a very high V_OC of 747 mV with a 58-¦Ìm-thick wafer owing to a sufficiently low surface recombination velocity. We also indicate the future directions for improving the efficiency. The uniformization of the texture size of the silicon surface and reduction of the carrier density in TCO film while maintaining an equal or lower conductivity are effective for improving the optical confinement.