For front-surface loss characterisation, the spectral dependence of the front-surface reflectivity has been investigated by spectrophotometrical measurements. The surface reflectivity was lowered under 10 % and this value was a good one compared to the reflectivity of silicon monocrystalline wafer untextured surface. The p–n junction made by phosphorous diffusion at 0.8 μm follows the honeycomb profile. In order to obtain low series resistance, a p+ boron diffusion on the back of the structure was made. The fabrication process was completed with an ohmic contact (Al on top and on the back surface).