Stoichiometry and local bond configuration of In₂S₃:Cl thin films by Rutherford backscattering spectrometry

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• 作者：Albert O. Juma ^{jumaa@biust.ac.bw" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Stoichiometry ; ILGAR ; Rutherford backscattering ; In2S3
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：15 October 2016
• 年：2016
• 卷：385
• 期：Complete
• 页码：84-88
• 全文大小：986 K

文摘

In₂S₃ thin films deposited using chemical methods always contain residual elements from the precursors, which modify their properties. As buffer layers in solar cells, the residual elements in the In₂S₃ layer affect the performance of these devices. The stoichiometry of In₂S₃ thin films deposited by spray ion layer gas reaction (ILGAR) was studied as a function of the residual Cl from InCl₃ precursor by varying the deposition parameters. The chemical formula was deduced from the elemental composition determined using Rutherford backscattering (RBS). Incomplete sulfurization of the precursor implies that residual Cl⁻ remains bonded to the In³⁺ ions while some occupy interstitial and/or antisite positions in the In₂S₃ matrix. This results in thin films with different stoichiometry, described by the formula In₄S_6−xCl_2x+2y. This changes the local bond configuration and geometry and underpins the influence of residual Cl on the physical properties of In₂S₃ thin films.