InAs pixel matrix detectors fabricated by diffusion of Zn in a metal-organic vapour-phase epitaxy reactor
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- 作者：A. Sä ; ynä ; tjoki ; P. Kostamo ; J. Sormunen ; J. Riikonen ; A. Lankinen ; H. Lipsanen ; H. Andersson ; K. Banzuzi ; S. Nenonen ; H. Sipilä ; et al.
- 关键词：Indium arsenide ; Imaging detectors ; MOVPE
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：2006
- 出版时间：1 July 2006
- 年：2006
- 卷：563
- 期：1
- 页码：24-26
- 全文大小：131 K
文摘
We introduce a zinc diffusion process to fabricate an InAs-based detector matrix using an atmospheric pressure metal-organic vapour-phase epitaxy reactor. Current–voltage characteristics are measured and different diffusion parameters are experimented. Spectral alpha radiation response of the diode is reported. To our knowledge, this is the first time that InAs was used as an alpha particle detector.