Analytical model of LDMOS with a single step buried oxide layer
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- 作者：Song Yuan yuansong1013@163.com" class="auth_mail" title="E-mail the corresponding author ; Baoxing Duan ; bxduan@163.com" class="auth_mail" title="E-mail the corresponding author ; Zhen Cao icaozhen@163.com" class="auth_mail" title="E-mail the corresponding author ; Haijun Guo guohj0822@163.com" class="auth_mail" title="E-mail the corresponding author ; Yintang Yang ytyang@xidian.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Silicon on insulator ; Surface electric field ; Electric field modulation effect ; Power device
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：358-370
- 全文大小：2466 K
文摘
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The analytic model for the SBOSOI (Single-Step Buried Oxide Silicon On Insulator) structure is achieved.
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The breakdown voltage enhancement of the SBOSOI with about 60% higher than conventional SOI LDMOS is observed.
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The electric field modulation effect is explained through the analytical model.
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The fully depletion criterion and RESURF criterion for the SBOSOI structure is achieved.
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The different breakdown conditions at the junctions in the device are analyzed.