Stoichiometric MgB₂ layers produced by multi-energy implantation of boron into magnesium

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• 作者：Z. Werner ; W. Szymczyk ; J. Piekoszewski ; M.P. Seah ; R. Ratajczak ; L. Nowicki ; M. Barlak ; E. Richter
• 关键词：Sputtering yield ; Ion implantation ; RBS ; Magnesium diboride ; Implantation profiles
• 刊名：Surface and Coatings Technology
• 出版年：2009
• 出版时间：15 June 2009
• 年：2009
• 卷：203
• 期：17-18
• 页码：2712-2716
• 全文大小：702 K

文摘

Ion implantation manufacture of superconducting magnesium diboride films of the MgB₂ stoichiometry (B:Mg = 2:1 composition) by boron implantation in Mg wafers requires a precise knowledge of the implantation process properties, in particular of the partial sputtering yields of Mg atoms by B ions. To verify these yields experimentally we deposited thin Mg films on glassy carbon platelets and implanted them with high fluences of 40, 60, and 80 keV B⁺ ions. He-backscattering (RBS) spectrometry was used to determine before- and after-implantation depth profiles of Mg and B. The sputtering yields turned out to be small enough (< 0.1 atoms per ion) to neglect sputtering in simulations of the implanted profiles. The results of the simulations have been compared to RBS spectra recorded on samples treated with 3 energies/fluencies optimised for a wide plateau of the B:Mg = 2:1 stoichiometric composition.