Investigating doping effects on high-¦Ê metal gate stack for effective work function engineering
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- 作者：C. Leroux ; S. Baudot ; M. Charbonnier ; A. Van Der Geest ; P. Caubet ; A. Toffoli ; Ph. Blaise ; G. Ghibaudo ; F. Martin ; G. Reimbold
- 关键词：High-k ; Metal gate ; Work function ; CV ; Roll-off ; Internal photon emission
- 刊名：Solid-State Electronics
- 出版年：2013
- 出版时间：October, 2013
- 年：2013
- 卷：88
- 期：Complete
- 页码：21-26
- 全文大小：1255 K
文摘
The impact of additives (La, Al and Mg) at the SiO<sub>2sub>/high-¦Ê interface has been investigated through ab initio simulations and electrical measurements. Various gate stacks with additive below or the above high-¦Ê dielectric are compared. Combination of capacitance versus gate bias measurement and internal photon emission is performed to demonstrate that the threshold voltage shift is related to a dipole formation at the SiO<sub>2sub>/high-¦Ê interface. The respective roles of aluminum and lanthanum are clearly identified as well as their sensitivity to roll-off. Impact of additive on metal gate function is studied. Finally, ab initio enables an analysis of the dipole formation with additive at the SiO<sub>2sub>/HfO<sub>2sub> interface.