An approach to downconversion solar cells

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• 作者：Mark B. Spitzer^b ; ^{mbspitzer@photonicglass.com} ; Hans P. Jenssen^a ; Arlete Cassanho^a
• 关键词：Downconversion ; Solar cell ; Cross relaxation ; Quantum cutting ; KY3F10 ; BaY2F8
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2013
• 出版时间：January, 2013
• 年：2013
• 卷：108
• 期：Complete
• 页码：241-245
• 全文大小：546 K

文摘

We describe an approach to solar downconversion in which a semiconductor is used for absorption, and substitutional rare earth ions are used for emission. The semiconductor would provide broad-band absorption, and the rare earth ions would provide emission of multiple photons by a cross relaxation process in a narrow wavelength band. The emitted photons are then absorbed by a solar cell formed from a low band gap semiconductor such as silicon. Er and Yb are suggested owing to strong emission at 980 nm which are useful when the down-converter is paired with silicon solar cells. The use of InGaN is proposed for the absorbing host semiconductor.