Etching characteristics of phase change material GeTe in inductively coupled BCl3/Ar plasma for phase change memory
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- 作者：Yangyang Xiaa ; b ; c ; xiayangyang@mail.sim.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Bo Liua ; b ; liubo@mail.sim.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Qing Wanga ; b ; c ; Zhonghua Zhanga ; b ; c ; Shasha Lia ; b ; c ; Yonghui Zhenga ; b ; c ; Le Lia ; b ; c ; Sannian Songa ; b ; Weijun Yina ; b ; Dongning Yaoa ; b ; Zhitang Songa ; b ; Songlin Fenga ; b
- 关键词：GeTe ; BCl3/Ar ; Etching ; ICP ; Phase change material
- 刊名：Microelectronic Engineering
- 出版年：2016
- 出版时间：1 August 2016
- 年：2016
- 卷：161
- 期：Complete
- 页码：69-73
- 全文大小：976 K
文摘
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The GeTe were etched in inductively coupled BCl3/Ar plasma with various parameters: gas mixture, substrate bias, ICP power and gas pressure.
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The etch rate increased with increasing BCl3 fraction and bias power. It reached a maximum value and then decreases as the gas pressure and ICP power increase. The surface roughness increased with both the bias and ICP powers but decreased with the gas pressure.
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The etch damage is little, and the Ge/Te ration is stable after tens of seconds Ar ion sputtering.