Firing-stable PassDop passivation for screen printed n-type PERL solar cells based on a-SiNx:P
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- 作者：Bernd Steinhauser ; bernd.steinhauser@ise.fraunhofer.de" class="auth_mail ; Muhammad bin Mansoor muhammadbinmansoor@gmail.com" class="auth_mail ; Ulrich Jä ; ger ulrich.jaeger@ise.fraunhofer.de" class="auth_mail ; Jan Benick jan.benick@ise.fraunhofer.de" class="auth_mail ; Martin Hermle martin.hermle@ise.fraunhofer.de" class="auth_mail
- 关键词：n-type ; Passivation ; Silicon nitride
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：July 2014
- 年：2014
- 卷：126
- 期：Complete
- 页码：96-100
- 全文大小：818 K
文摘
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We introduce firing-stable a-SiNx:P layers as a surface passivation for n-type solar cells.
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We introduce firing-stable a-SiNx:P layers as a dopant source for local back surface field formation.
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We fabricate n-type PERL solar cells based on firing-stable a-SiNx:P rear side passivation layers with PVD contacts.
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We fabricate n-type PERL solar cells based on firing-stable a-SiNx:P rear side passivation layers with screen printed front side contacts.