BeO doping effect on the critical current density in Pb substituted Bi2212 crystals

详细信息    查看全文

• 作者：Sasakura ; H. ; Miura ; O. ; Ito ; D.
• 关键词：74.60.Ge ; 74.72.Hs ; 74.60.Jg ; BeO ; Flux pinning ; Bi(Pb)2212 ; Critical current density
• 刊名：Physica C
• 出版年：2001
• 出版时间：September, 2001
• 年：2001
• 卷：357-360
• 期：Part 1
• 页码：216-221
• 全文大小：574 K

文摘

BeO doping effect on flux pinning properties in Bi(Pb)2212 crystals were studied. Critical current densities for BeO 10 vol % doped crystals in self-field increased all over temperature region in comparison with BeO-free crystals. The second peak in magnetization curves was observed for BeO 2 vol % doped crystal in the temperature region from 20 to 40 K. Irreversibility field B_irr for the 2 vol % BeO doped crystals improved in the temperature 40–77 K. The theoretical value of power law of the B_irr to the temperature based on the flux creep theory is in good agreement to the experimental value in the region 15–60 K.