Electronic structure of Ar⁺ ion-sputtered thin-film MoS₂: A XPS and IPES study

详细信息    查看全文

• 作者：Antonino Santoni^a ; ^{antonino.santoni@enea.it" class="auth_mail" title="E-mail the corresponding author} ; Flaminia Rondino^a ; Claudia Malerba^b ; ^c ; Matteo Valentini^b ; ^d ; Alberto Mittiga^b
• 关键词：MoS2 ; Sulphurization ; CZTS ; Ar+ ion sputtering ; XPS ; Inverse photoemission
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：392
• 期：Complete
• 页码：795-800
• 全文大小：993 K

文摘

Polycrystalline MoS₂ grown by Mo sulphurization was exposed to increasing doses of Ar⁺ ions at 250 eV starting from 2.2 × 10¹⁵ ions/cm² to 3.92 × 10¹⁷ ions/cm². Electronic structure changes were monitored by X-Ray Photoelectron Spectroscopy (XPS) and Inverse Photolectron Spectroscopy (IPES). No change in the Fermi level position was observed with Ar⁺ dosing. Ion bombardment resulted in a new visible feature at lower binding energy in the Mo3d core level, while the S2p lineshape showed little changes. The formation of a steady state from 2.49 × 10¹⁷ ions/cm² has been detected. The investigation of the occupied and unoccupied states on the steady-state surface pointed to the simultaneous presence of metallic-like Mo with amorphous MoS_2-x.