Light-emitting diodes fabricated from small-size ZnO quantum dots

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• 作者：Q. Qiao^a ; ^b ; B.H. Li^a ; ^{binghuili@163.com} ; C.X. Shan^a ; ^{phycxshan@yahoo.com.cn} ; J.S. Liu^a ; ^b ; J. Yu^a ; ^b ; X.H. Xie^a ; ^b ; Z.Z. Zhang^a ; T.B. Ji^a ; Y. Jia^c ; D.Z. Shen^a
• 关键词：Zinc oxide ; Semiconductors ; Quantum dot ; Light-emitting diode ; Luminescence
• 刊名：Materials Letters
• 出版年：2012
• 出版时间：1 May, 2012
• 年：2012
• 卷：74
• 期：Complete
• 页码：104-106
• 全文大小：594 K

文摘

Zinc oxide (ZnO) quantum dots (QDs) have been fabricated. High-resolution transmission electron microscopy shows that the ZnO QDs have a narrow size distribution, and are highly crystallized with wurtzite structure. Light-emitting diodes have been constructed by employing the QDs as active layers. Intense near-band-edge emissions have been observed from the diodes, which show a noticeable blue-shift compared with the emission of a similar diode employing ZnO film as an active layer, which is demonstrated to come from the quantum size effect of the QDs due to their small size.