Silicon nanowires integrated with CMOS circuits for biosensing application
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- 作者：G. Jayakumar ; ganeshj@kth.se" class="auth_mail ; A. Asadollahi ; P.-E. Hellströ ; m ; K. Garidis ; M. Ö ; stling
- 关键词：Nanowire ; Biosensing ; SOI ; CMOS ; STL
- 刊名：Solid-State Electronics
- 出版年：August 2014
- 年：2014
- 卷：98
- 期：Complete
- 页码：26-31
- 全文大小：1889 K
文摘
We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of N by N pixel matrix (N2 pixels or test sites) and 8 input–output (I/O) pins. In each pixel a single crystalline SiNW with 75 by 20 nm cross-section area is defined using sidewall transfer lithography in the SOI layer. The key advantage of the design is that each individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases.