Argon annealing induced morphological transformation from nanowire to nanoflake and high photocurrent gain of ZnO:Al films
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- 作者：Biswajit Ghosh ; Rashmeeta Das ; Pushan Banerjee ; Gaurab Basu ; Subrata Das ; neillohit@yahoo.co.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Metal oxide ; Nanowires ; SIMS ; Photoconductivity ; Photoluminescence
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 August 2016
- 年：2016
- 卷：612
- 期：Complete
- 页码：101-108
- 全文大小：1407 K
文摘
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ZnO and ZnO:Al nanowires were synthesized using thermal oxidation method.
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Argon annealing triggered change in morphology from nanowire to nanoflake for ZnO:Al.
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Depth profile reveals Ar annealing triggered Al. migration from bulk to the surface.
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Substantial increment of photocurrent gain for ZnO:Al owing to Ar annealing.