High-temperature ferromagnetism in Zn_1−xMn_xO semiconductor thin films

详细信息    查看全文

• 作者：Nikoleta Theodoropoulou ; Vinith Misra ; John Philip ; Patrick LeClair ; Geetha P. Berera ; Jagadeesh S. Moodera ; Biswarup Satpati and Tapobrata Som
• 关键词：Spintronics ; Magnetic semiconductors
• 刊名：Journal of Magnetism and Magnetic Materials
• 出版年：2006
• 出版时间：May 2006
• 年：2006
• 卷：300
• 期：2
• 页码：407-411
• 全文大小：189 K

文摘

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in Zn_1−xMn_xO thin films grown on Al₂O₃ and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 μ_B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior.