Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure
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- 作者：Sohei Okazakia ; b ; Yasushi Hirosea ; b ; c ; hirose@chem.s.u-tokyo.ac.jp" class="auth_mail ; Shoichiro Nakaoa ; b ; Chang Yanga ; b ; c ; Isao Harayamad ; Daiichiro Sekibad ; Tetsuya Hasegawaa ; b ; c
- 关键词：Oxyfluoride ; In2O3 ; Fluorine ; Reactive pulsed laser deposition ; Topotactic reaction ; Epitaxial growth ; Bixbyite ; Fluorite
- 刊名：Thin Solid Films
- 出版年：30 May 2014
- 年：2014
- 卷：559
- 期：Complete
- 页码：96-99
- 全文大小：1274 K
文摘
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InOxFy epitaxial thin films with high fluorine concentration were grown on Y:ZrO2.
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Anion composition and structural, optical and transport properties were studied.
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Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell.
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Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ~ 0.3.