Identification of divacancies in 4H-SiC
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文摘
The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, me=""mml45"">. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy–carbon antisite pairs in the double positive charge state me=""mml46"">, are related to the triplet ground states of the me=""mml47"">method=retrieve&_udi=B6TVH-4J5564W-8&_mathId=mml47&_user=10&_cdi=5535&_rdoc=89&_handle=V-WA-A-W-WVD-MsSAYWW-UUA-U-AACVDCDEDY-AACWBBYDDY-EYWVCUUYE-WVD-U&_acct=C000050221&_version=1&_userid=10&md5=173e046e7c8273481655c71cc99092d7"" title=""Click to view the MathML source"">C3v/C1h configurations of me=""mml48"">.

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