The influence of interface states and bulk carrier lifetime on the minority carrier behavior in an illuminated metal/insulator/GaN structure

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• 作者：Marcin Miczek^a ; ^{Marcin.Miczek@polsl.pl"" rel=""nofollow} ; Piotr Bidzi&#x144 ; ski^a ; Bogus&#x142 ; awa Adamowicz^a ; Chihoko Mizue^b ; Tamotsu Hashizume^b
• 关键词：A. Gallium nitride ; C. Solar-blind photodetector ; C. MIS structure ; D. Interface states
• 刊名：Solid State Communications
• 出版年：2011
• 出版时间：June 2011
• 年：2011
• 卷：151
• 期：11
• 页码：830-833
• 全文大小：294 K

文摘

An influence of electronic states at an insulator/GaN interface on the behavior of excess holes in an ultraviolet-illuminated metal/ SiO₂/n-GaN structure has been studied by numerical simulations for weak (gate bias of −0.1 V ) and strong (−1 V ) depletion, in a wide range of excitation light intensities (from 10¹⁰ to 10²⁰ photons cm⁻² s⁻¹) and for various bulk carrier lifetimes (from 1 to 100 ns). It has been found that the interface states with densities of 10¹² eV ⁻¹ cm⁻² dramatically reduce the total (integrated in the whole GaN layer) density of photogenerated holes and thus degrade the sensitivity of the metal/insulator/GaN-based photodetector.