High-performance vertical Si PiN diode by hole remaining mechanism

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• 作者：Masanori Tsukuda^a ; ^b ; ^{tsukuda@grik.jp} ; Akiyoshi Baba^c ; Yuji Shiba^b ; Ichiro Omura^b
• 关键词：Diode ; Vertical ; Trench ; Bosch ; Hole ; Reverse recovery
• 刊名：Solid-State Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：22-28
• 全文大小：2539 K
• 卷排序：129

文摘

A novel diode is predicted by TCAD simulation to have high performance. The diode shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. The active chip size of the novel diode is reduced to two-thirds. We specially focus on the analysis of phenomenon and the noise suppression mechanism.