High-efficient carbon-doped InGaAs/AlGaAs/GaAs quantum well lasers
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- 作者：Li ; Hanxuan ; Reinhardt ; Frank ; Birch ; Lorin ; Bradford ; Glenn
- 关键词：81.15Gh ; 68 ; 55.Ln ; 42.55.Px ; 42.60.Jf ; A1. Carbon doping ; A3. Metalorganic chemical vapor deposition ; B1. InGaAs/AlGaAs ; B3. High power laser diode
- 刊名：Journal of Crystal Growth
- 出版年：2004
- 出版时间：March 1, 2004
- 年：2004
- 卷：263
- 期：1-4
- 页码：181-184
- 全文大小：189 K
文摘
The carbon-doping behaviors of carbon tetrabromide (CBr4) in AlxGa1−xAs material system are studied by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Doping level dependence on growth temperature, and V/III ratio is established. C-doped InGaAs/AlGaAs/GaAs separate confinement laser structure (![]()
enter border=0 SRC=/images/glyphs/BQ1.GIF>940nm) are grown and demonstrated high quality with low-threshold current density. High-performance monolithic laser diode arrays are fabricated. A high slope efficiency of 1.17W/A and power efficiency of 62 % are achieved, which is much better than the performance of Zn-doped structure of the same design. Therefore, carbon doping is demonstrated to have unique advantages over Zn-doping for high-power semiconductor laser applications.